Al2O3 crystal substrate

Description

Substrate Specifications

  • Sapphire substrate is the popular substrates for III-V nitrides, superconductor and magnetic epi film due to less mis-matched lattice and stable chemical and physical properties
  • Maximum Size:  Diadeter 6 inch,  and other size contact for me
  • Orientation:

    (11-20 ) – a plane:  2.379 Å  (1-102) – r plane:  1.740 Å

    (10-10) – m plane:  1.375 Å  (0001) – c plane:   2.165 Å
  • Edge orietation Indication:    +/-2 Deg avaiable as option.
  • Polish:           EPI polished by CMP tecnology with less sub-surface lattice damage.
  • Surface finish (RMS or Ra): <5A
  • Pack:         Packed in 100 grade plastic bag under 1000 class clean room.

Optical Transmission Properties

Typical Properties: 

Typical Physical Properties
Crystal Structure Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
Growth Method CZ
Density 3.97 g/cm3
Melt Point 2040 oC
Hardness 9 ( Mohn)
Thermal expansion 7.5×10-6 (/oC)
Thermal Conductivity:  46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
Dielectric Constant ~ 9.4 @ 300K  at A axis, ~ 11.58 @ 300K at C axis 
Loss Tangent at 10 GHz < 2×10-5  at A axis , < 5 x10-5  at C axis
Crystal Purity >99.99%
Color and Appearance Transparent (sometimes slightly brown based on annealing condition). No twins.
Chemical Stability Insoluble in water

 

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1-16121QI337

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